Patent Assignment
Reel/Frame 012429/0932
Assignment of Assignor's Interest
Recorded: 2002-01-02
Pages: 3
Assignee
SEIKO EPSON CORPORATION
4-1, NISHI-SHINJUKU 2-CHOME, SHINJUKU-KU, TOKYO, JAPAN
Covered Property
(1)
Method for Fabrication of Field-Effect Transistor to Reduce Defects at Mos Interfaces Formed at Low Temperature
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.