Patent Assignment
Reel/Frame 012582/0422
Assignment of Assignor's Interest
Recorded: 2002-02-08
Pages: 2
Assignors
PARK, IL-YONG
Executed: 2001-12-26
KIM, JONG-DAE
Executed: 2001-12-26
KIM, SANG-GI
Executed: 2001-12-26
KOO, JIN-GUN
Executed: 2001-12-26
LEE, DAE-WOO
Executed: 2001-12-26
ROH, TAE-MOON
Executed: 2001-12-26
YANG, YIL-SUK
Executed: 2001-12-26
Assignee
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
161, GAJEONG-DONG, YUSONG-GU, DAEJON 305-350, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Fabricating Power Semiconductor Device Having Trench Gate Structure