Patent Assignment
Reel/Frame 012674/0087
Assignment of Assignor's Interest
Recorded: 2002-02-28
Pages: 2
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHON-SHI, KYOUNGKI-DO 467-860, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Forming TA2O5 Dielectric Layer Using Plasma Enhanced Atomic Layer Deposition
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.