Patent Assignment
Reel/Frame 012789/0547
Assignment of Assignor's Interest
Recorded: 2002-04-04
Received: 2002-04-18
Pages: 4
Assignors
BABCOKE, JASON E.
Executed: 2002-03-12
BROWN, JEFFREY A.
Executed: 2002-03-12
CHIANG, TONY P.
Executed: 2002-03-12
LEESER, KARL F.
Executed: 2002-03-12
Assignee
ANGSTRON SYSTEMS, INC.
3350 SCOTT BOULEVARD, BUILDING 62, SANTA CLARA, CA, 95054, UNITED STATES
Covered Properties
(2)
Method of Forming a Metal Gate in a Semiconductor Device Using Atomic Layer Deposition Process
Application:
10/036,156 →
Adsorption Process for Atomic Layer Deposition
Application:
09/999,636 →