Patent Assignment
Reel/Frame 012808/0215
Assignment of Assignor's Interest
Recorded: 2002-04-16
Received: 2002-04-24
Pages: 3
Assignor
HARADA, YOSHINAO
Executed: 2002-04-12
Assignee
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, OAZA KADOMA,, KADOMA-SHI, OSAKA, JPX, 571-8, JAPAN
Covered Property
(1)
A Method of Forming a Silicon-Containing Metal-Oxide Gate Dielectric by Depositing a High Dielectric Constant Film on a Silicon Substrate and Diffusing Silicon from the Substrate into the High Dielectric Constant Film
Application:
10/122,366 →