IP Library › Granted Patent US 6,642,131
Granted Patent Utility
US 6,642,131 · Confirmation No. 4870

A METHOD OF FORMING A SILICON-CONTAINING METAL-OXIDE GATE DIELECTRIC BY DEPOSITING A HIGH DIELECTRIC CONSTANT FILM ON A SILICON SUBSTRATE AND DIFFUSING SILICON FROM THE SUBSTRATE INTO THE HIGH DIELECTRIC CONSTANT FILM

Inventor: Yoshinao Harada
Patented Case View Patent ↗ View Publication ↗
⬇ PDF
 Code Description Pages PDF
2003-05-06 LET. Miscellaneous Incoming Letter 2 View
2002-04-16 TRNA Transmittal of New Application 2 View
2002-04-16 A.PE Preliminary Amendment 3 View
2002-04-16 SPEC Specification 36 View
2002-04-16 CLM Claims 7 View
2002-04-16 ABST Abstract 1 View
2002-04-16 DRW Drawings-only black and white line drawings 14 View
2002-04-16 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,642,131
App. No.
10/122,366
Filed
2002-04-16
Granted
2003-11-04
Pub. No.
US20020195643A1
Art Unit
2813
PTA
0 days