Assignment of Assignor's Interest

Recorded: 2002-09-26 Received: 2002-09-30 Pages: 9

Assignor

CONEXANT SYSTEMS, INC.

Executed: 2002-03-12

Assignee

NEWPORT FAB, LLC

4311 JAMBOREE ROAD, NEWPORT BEACH, CA, 92660-3095, UNITED STATES

Covered Properties (15)

Structure for a Selective Epitaxial Hbt Emitter

Application: 10/067,034 →

Method and Structure for Eliminating Collector-Base Band Gap Discontinuity in an Hbt

Application: 10/066,872 →

Band Gap Compensated Hbt

Application: 10/066,871 →

Method for Controlling Critical Dimension in an Hbt Emitter and Related Structure

Application: 10/067,159 →

Microelectronic Air-Gap Structures and Methods of Forming the Same

Application: 09/967,115 →

Method and Apparatus for High-Resolution in-Situ Plasma Etching of Inorganic and Metal Films

Application: 09/955,677 →

Method for Fabricating Lateral Pnp Heterojunction Bipolar Transistor and Related Structure

Application: 09/853,735 →

Method to Reduce Emitter to Base Capacitance and Related Structure

Application: 09/852,183 →

Method for Opening a Semiconductor Region for Fabricating an Hbt

Application: 09/851,228 →

Method for Reducing Base to Collector Capacitance and Related Structure

Application: 09/850,028 →

Low Cost Fabrication of High Resistivity Resistors

Application: 09/833,953 →

High Performance Bipolar Transistor

Application: 09/811,321 →

Metal Resistor

Application: 60/276,277 →

Thin-film capacitors and methods for forming the same

Application: 09/772,726 →

On-Chip Inductors

Application: 09/754,806 →