Patent Assignment
Reel/Frame 013309/0597
Assignment of Assignor's Interest
Recorded: 2002-09-23
Received: 2002-09-25
Pages: 5
Assignor
OVONYX, INC.
Executed: 2002-09-09
Assignee
INTEL CORPORATION
2200 MISSION COLLEGE BLVD., SANTA CLARA, CA, 95054, UNITED STATES
Covered Properties
(6)
Phase Change Material Memory Device
Application:
10/039,021 →
Isolating Phase Change Meterial Memory Cells
Application:
10/005,767 →
Reducing Shunts in Memories with Phase-Change Material
Application:
09/953,833 →
Using Selective Deposition to Form Phase-Change Memory Cells
Application:
09/948,874 →
Phase Change Material Memory Device
Application:
09/948,830 →
Multiple Layer Phase-Change Memory
Application:
09/945,331 →