Assignment of Assignor's Interest

Recorded: 2002-10-08 Pages: 2

Assignors

MOTOKI, KENSAKU

Executed: 2002-09-19

HIROTO, RYU

Executed: 2002-09-19

OKAHISA, TAKUJI

Executed: 2002-09-19

NAKAHATA, SEIJI

Executed: 2002-09-20

Assignee

5-33, KITAHAMA 4-CHOME, CHUO-KU, OSAKA, JAPAN

Covered Property (1)

Single Crystal Gan Substrate, Method of Growing Single Crystal Gan and Method of Producing Single Crystal Gan Substrate

Patent: 7,087,114 →

Application: 10/265,719 →

Publication: US 2003/0145783

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.