IP Library › Assignment 013896/0487
Patent Assignment
Reel/Frame 013896/0487

Assignment of Assignor's Interest

Recorded: 2003-03-21 Pages: 2
Assignor
ISHIHARA, SHO
Executed: 2003-03-12
Assignee
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
1753, SHIMONUMABE, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, JAPAN
Covered Property (1)
Lateral Type Power Mos Transistor Having Trench Gate Formed on Silicon-on-Insulator (Soi) Substrate
Patent: 6,812,522 →
Application: 10/393,288 →
Publication: US 2003/0197240
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Apr 4, 2006
From: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 017422/0528 →
Change of Name Dec 22, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025525/0154 →