Patent Assignment
Reel/Frame 017422/0528
Assignment of Assignor's Interest
Recorded: 2006-04-04
Received: 2006-04-04
Pages: 19
Assignor
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
Executed: 2006-03-15
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA, JPX, 211-8668, JAPAN
Covered Properties
(56)
Sheathed microduct system
Application:
10/483,671 →
Photoelectric Current and Voltage Converting Circuit
Application:
10/923,719 →
Photoelectric Current and Voltage Converting Circuit
Application:
10/923,720 →
Photovoltaic Solid State Relay
Application:
10/694,725 →
Semiconductor Device Including Bipolar Junction Transistor, and Production Method Therefor
Application:
10/673,476 →
Lid-Holding Frame Used in Production of Hollow-Package Type Electronic Products, and Sealing-Process Using Such Lid-Holding Frame
Application:
10/623,952 →
Heterojunction Bipolar Transistor and Method of Producing the Same
Application:
10/447,934 →
Low Noise Gain-Controlled Amplifier
Application:
10/444,256 →
Semiconductor Switch Apparatus Including Isolated Mos Transistors
Application:
10/443,007 →
Lead-Less Semiconductor Device with Improved Electrode Pattern Structure
Application:
10/427,943 →
Semiconductor Device Having Pad Electrode Connected to Wire
Application:
10/411,109 →
Optical Semiconductor Device Increasing Productivity and Method of Fabricating the Same
Application:
10/406,719 →
Semiconductor Laser Device Having a Current Non-Injection Area
Application:
10/402,926 →
Phase Comparison Method, Phase Comparison Circuit, and Phase Locked Loop (Pll) Type Circuit
Application:
10/400,105 →
Lateral Type Power Mos Transistor Having Trench Gate Formed on Silicon-on-Insulator (Soi) Substrate
Application:
10/393,288 →
Compact Semiconductor Laser Diode Module
Application:
10/378,302 →
Optical Semiconductor Device and Method for Manufacturing the Same
Application:
10/372,278 →
Semiconductor device in which a semiconductor chip mounted on a printed circuit is sealed with a molded resin
Application:
10/372,569 →
High-Isolation Semiconductor Device
Application:
10/341,698 →
Schottky Gate Field Effect Transistor
Application:
10/337,107 →
High-Frequency Circuit
Application:
10/324,404 →
Active Bias Circuit Having Wilson and Widlar Configurations
Application:
10/319,995 →
Fractional N Frequency Synthesizer
Application:
10/261,904 →
Semiconductor Device for Optically Coupling Semiconductor Light-Emitting Device to Optical Fiber
Application:
10/253,752 →
Heterojunction Bipolar Transistor and Semiconductor Integrated Circuit Device Using the Same
Application:
10/218,775 →
Semiconductor Device
Application:
10/199,592 →
Predistortion Type Linearizer Controlled by Two Control Voltages
Application:
10/162,297 →
Phase Shifter with an Rc Polyphase Filter
Application:
10/125,826 →
Clock Supply Bias Circuit and Single-Phase Clock Drive Frequency Dividing Circuit Using the Same
Application:
10/099,276 →
Semiconductor Device and Method of Producing the Same
Application:
10/084,233 →
Wavelength Stabilizing Unit and Wavelength Stabilized Laser Module
Application:
10/021,537 →
Micro-Wave Power Amplifier
Application:
09/998,686 →
Method of Manufacturing a Plural Unit High Frequency Transistor
Application:
09/973,717 →
Schottky Barrier Field Effect Transistor Large in Withstanding Voltage and Small in Distortion and Return-Loss
Application:
09/966,934 →
Semiconductor Device with an Improved Bonding Pad Structure and Method of Bonding Bonding Wires to Bonding Pads
Application:
09/942,729 →
Semiconductor Circuit with a Stabilized Gain Slope
Application:
09/933,751 →
Semiconductor Circuit with a Stabilized Gain Slope
Application:
09/933,809 →
Semiconductor circuit with a stabilized gain slope
Application:
09/933,808 →
Pll Circuit with Shortened Lock-Up Time
Application:
09/921,625 →
Variable Gain Amplifier
Application:
09/888,179 →
Method of Manufacturing a Semiconductor Device
Application:
09/878,893 →
Negative Feed-Back Amplifier and Method for Negative Feed-Back
Application:
09/872,730 →
Method of Producing a Semiconductor Device
Application:
09/870,299 →
Bipolar Transistor in Which Impurities Are Introduced from Emitter Electrode Material to Form Emitter Region
Application:
09/862,375 →
Light Source for Integrating Modulator and Module for Optical Communication
Application:
09/850,115 →
High-Frequency Circuit and Its Module for Communication Devices
Application:
09/842,243 →
Active Bias Circuit Having Wilson and Widlar Configurations
Application:
09/837,730 →
Image Rejection Mixer
Application:
09/821,002 →
Self-Sustained Pulsating Laser Diode
Application:
09/819,969 →
MIM capacitor having reduced capacitance error and phase rotation
Application:
09/817,045 →
Semiconductor Integrated Device
Application:
09/797,271 →
Active Bias Circuit Having Wilson and Widlar Configurations
Application:
09/794,698 →
Semiconductor Optical Device and Method of Manufacturing the Same
Application:
09/784,198 →
Ow Current Amplifier Circuit with Protection Against Static Electricity
Application:
09/769,540 →
Semiconductor Laser Having an Active Layer Provided Between Two Different Conduction Types of Semiconductor Layers, and Optical Modules and Communication Systems Formed Therewith
Application:
09/770,115 →
High-Frequency Variable Attenuator Having a Controllable Reference Voltage
Application:
09/760,625 →