Patent Assignment
Reel/Frame 014016/0983
Assignment of Assignor's Interest
Recorded: 2003-09-30
Received: 2003-09-30
Pages: 4
Assignor
INFINEON TECHNOLOGIES NORTH AMERICA CORP.
Executed: 2003-09-29
Assignee
INFINEON TECHNOLOGIES AG
ST. MARTIN-STR. 53, 81669 MUNICH, DEX, GERMANY
Covered Properties
(6)
Error Detection and Correction Method and Apparatus in a Magnetoresistive Random Access Memory
Application:
10/250,201 →
Dual Gate Material Process for Cmos Technologies
Application:
10/249,800 →
Structure and Method of Forming a Notched Gate Field Effect Transistor
Application:
10/249,771 →
Layout Impact Reduction with Angled Phase Shapes
Application:
10/249,317 →
Selective Silicidation Scheme for Memory Devices
Application:
10/376,461 →
Using Isolated P-Well Transistor Arrangements to Avoid Leakage Caused by Word Line/Bit Line Shorts
Application:
10/289,075 →