Assignment of Assignor's Interest

Recorded: 2003-07-03 Pages: 2

Assignor

ESHEL, NOAM

Executed: 2003-06-12

Assignee

TOWER SEMICONDUCTOR LTD.

RAMAT GABRIEL INDUSTRIAL AREA, MIGDAL HAEMEK,, 23105, ISRAEL

Covered Property (1)

Low Voltage Sensing Circuit for Non-Volatile Memory Device

Patent: 6,775,186 →

Application: 10/613,845 →

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.