Patent Assignment
Reel/Frame 014550/0644
Assignment of Assignor's Interest
Recorded: 2003-10-03
Pages: 3
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHON-SHI, KYOUNGKI-DO, 467-860, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Forming Metal Silicide Layer in Active Area of Semiconductor Device
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.