Patent Assignment
Reel/Frame 014655/0644
Assignment of Assignor's Interest
Recorded: 2003-10-30
Pages: 3
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
NO. 8, LI-HSIN RD. 6, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, 300-77 R.O.C., TAIWAN
Covered Property
(1)
Method of Improving Short Channel Effect and Gate Oxide Reliability by Nitrogen Plasma Treatment Before Spacer Deposition