Patent Assignment
Reel/Frame 014699/0766
An Assignment, Effective June 30, 2003
Recorded: 2004-06-08
Received: 2004-06-08
Pages: 4
Assignor
ADVANCED MICRO DEVICES, INC.
Executed: 2004-05-15
Assignee
AMD (U.S.) HOLDINGS, INC.
ONE AMD PLACE, P.O. BOX 3453, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Properties
(9)
Trench Side Wall Charge Trapping Dielectric Flash Memory Device
Application:
10/430,582 →
Method of Formation of Gate Stack Spacer and Charge Storage Materials Having Reduced Hydrogen Content in Charge Trapping Dielectric Flash Memory Device
Application:
10/430,471 →
Process for Reducing Hydrogen Contamination in Dielectric Materials in Memory Devices
Application:
10/429,447 →
Alignment System for Planar Charge Trapping Dielectric Memory Cell Lithography
Application:
10/394,565 →
Charge-Trapping Memory Arrays Resistant to Damage from Contact Hole Formation
Application:
10/382,726 →
Method of Formation of Semiconductor Resistant to Hot Carrier Injection Stress
Application:
10/359,872 →
Ono Fabrication Process for Increasing Oxygen Content at Bottom Oxide-Substrate Interface in Flash Memory Devices
Application:
10/358,586 →
Ono Fabrication Process for Reducing Oxygen Vacancy Content in Bottom Oxide Layer in Flash Memory Devices
Application:
10/308,518 →
Key Track System
Application:
10/090,921 →