Patent Assignment
Reel/Frame 014953/0817
Assignment of Assignor's Interest
Recorded: 2004-02-12
Received: 2004-02-18
Pages: 4
Assignor
NEC ELECTRONICS CORPORATION
Executed: 2003-11-01
Assignee
ELPIDA MEMORY, INC.
2-1, YAESU 2-CHOME, CHUO-KU, TOKYO, JPX, JAPAN
Covered Properties
(2)
Method and Manufacturing a Semiconductor Device Having a Ruthenium or a Ruthenium Oxide
Application:
10/091,531 →
Semiconductor Device Having Interconnection Implemented by Refractory Metal Nitride Layer and Refractory Metal Silicide Layer and Process of Fabrication Thereof
Application:
10/074,936 →