Assignment of Assignor's Interest

Recorded: 2004-03-01 Pages: 3

Assignor

DONG, CHA DEOK

Executed: 2003-08-15

Assignee

HYNIX SEMICONDUCTOR INC.

SAN 136-1, AMI-RI, BUBAL-UEP, ICHON-SHI, KYUNGKI-DO, 467-860, KOREA, REPUBLIC OF

Covered Property (1)

Method of forming device isolation film in semiconductor device

Application: 10/720,457 →

Publication: US 2004/0266132

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.