Patent Assignment
Reel/Frame 015339/0499
Assignment of Assignor's Interest
Recorded: 2004-05-17
Pages: 11
Assignors
KIM, SUNG-MIN
Executed: 2003-12-28
PARK, DONG-GUN
Executed: 2003-12-28
LEE, SUNG-YOUNG
Executed: 2003-12-28
CHO, HYE-JIN
Executed: 2003-12-28
YUN, EUN-JUNG
Executed: 2003-12-28
LEE, SHIN-AE
Executed: 2003-12-28
OH, CHANG-WOO
Executed: 2003-12-28
CHOE, JEONG-DONG
Executed: 2003-12-28
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Methods of Fabrication Metal Oxide Semiconductor (Mos) Transistors Having Buffer Regions Below Source and Drain Regions