Patent Assignment
Reel/Frame 015693/0901
Assignment of Assignor's Interest
Recorded: 2005-02-09
Pages: 3
Assignors
YOON, JAE-MAN
Executed: 2004-05-18
PARK, DONG-GUN
Executed: 2004-05-19
JIN, GYO-YOUNG
Executed: 2004-08-18
MAKOTO, YOSHIDA
Executed: 2004-05-18
PARK, TAI-SU
Executed: 2004-05-18
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Double Gate Field Effect Transistor and Method of Manufacturing the Same