IP Library › Assignment 015723/0551
Patent Assignment
Reel/Frame 015723/0551

Assignment of Assignor's Interest

Recorded: 2004-08-25 Pages: 3
Assignors
AKITA, KATSUSHI
Executed: 2004-06-14
TAKASUKA, EIRYO
Executed: 2004-06-14
NAKAYAMA, MASAHIRO
Executed: 2004-07-19
UENO, MASAKI
Executed: 2004-07-14
MIURA, KOUHEI
Executed: 2004-07-14
KYONO, TAKASHI
Executed: 2004-07-13
Assignee
SUMITOMO ELECTRIC INDUSTRIAL CO., LTD.
5-33, KITAHAMA 4-CHOME, CHUO-KU, OSAKA-SHI OSAKA, 541-0041, JAPAN
Covered Property (1)
Gan Substrate and Method of Fabricating the Same, Nitride Semiconductor Device and Method of Fabricating the Same
Patent: 7,387,678 →
Application: 10/875,512 →
Publication: US 2004/0262624
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrected Cover Sheet to Correct Execution Dates, Previously Recorded at Reel/Frame 015723/0551 (Assignment of Assignor's Interest) Jan 10, 2007
From: AKITA, KATSUSHI; TAKASUKA, EIRYO; NAKAYAMA, MASAHIRO; UENO, MASAKI
To: SUMITOMO ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 018776/0414 →