Corrective Assignment to Correct the Spelling of the Second Assignee's Address Previously Recorded at Reel 015548 Frame 0596.

Recorded: 2005-03-09 Pages: 4

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Assignors

KITAOKA, YASUO

Executed: 2004-06-24

MINEMOTO, HISASHI

Executed: 2004-06-24

KIDOGUCHI, ISAO

Executed: 2004-06-24

SASAKI, TAKATOMO

Executed: 2004-06-24

MORI, YUSUKE

Executed: 2004-06-24

KAWAMURA, FUMIO

Executed: 2004-06-24

Assignees

MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

1006, OAZA KADOMA, KADOMA-SHI, OSAKA 571-8501, JAPAN

MORI, YUSUKE

8-16-9, KISAICHI, KATANO-SHI, OSAKA 576-0033, JAPAN

Covered Property (1)

Method of Manufacturing Group Iii Nitride Crystals, Method of Manufacturing Semiconductor Substrate, Group Iii Nitride Crystals, Semiconductor Substrate, and Electronic Device

Patent: 7,255,742 →

Application: 10/884,252 →

Publication: US 2005/0011432

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.

Assignment of Assignor's Interest Jul 2, 2004

From: KITAOKA, YASUO; MINEMOTO, HISASHI; KIDOGUCHI, ISAO; SASAKI, TAKATOMO

To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.; MORI, YUSUKE

Reel/Frame 015548/0596 →