Assignment of Assignor's Interest

Recorded: 2004-12-27 Pages: 3

Assignor

KO, KWANG YOUNG

Executed: 2004-12-15

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10 DAECHI-DONG, GANGNAM-GU, SEOUL, KOREA, REPUBLIC OF

Covered Property (1)

Method of fabricating high voltage device using double epitaxial growth

Application: 11/020,476 →

Publication: US 2005/0179092

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.