Patent Assignment
Reel/Frame 016141/0019
Assignment of Assignor's Interest
Recorded: 2004-12-29
Pages: 3
Assignor
JUNG, JIN HYO
Executed: 2004-12-17
Assignee
DONGBUANAM SEMICONDUCTOR INC.
891-10 DAECHI-DONG, GANGNAM-GU, SEOUL, KOREA, REPUBLIC OF
Covered Property
(1)
Nonvolatile Memory Device Capable of Preventing Over-Erasure via Modified Tunneling Through a Double Oxide Layer Between a Floating Gate and a Control Gate.
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.