IP Library Assignment 016281/0026
Patent Assignment
Reel/Frame 016281/0026

Assignment of Assignor's Interest

Recorded: 2005-02-15 Pages: 3
Assignors
SAITO, TSUYOSHI
Executed: 2004-12-13
ITOH, HIROMI
Executed: 2005-01-14
KITAZOE, MAKIKO
Executed: 2005-01-18
Assignees
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
16-1, ONOGAWA TSUKUBA-SHI, IBARAKI, 305-8569, JAPAN
ULVAC, INC.
2500, HAGISONO CHIGASAKI-SHI, KANAGAWA, 253-0071, JAPAN
Covered Property (1)
Method of Forming Silicon Nitride Film and Method of Manufacturing Semiconductor Device
Patent: 7,510,984 →
Application: 11/057,246 →
Publication: US 2005/0196977
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrected Form Cover Sheet Assignment Tp Caprrect Assogmee # 2'S Address Previously Recorded on Reel 016281 Frame 0026. Oct 11, 2005
From: SAITO, TSUYOSHI; ITOH, HIROMI; KITAZOE, MAKIKO
To: ULVAC, INC.; SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
Reel/Frame 017078/0169 →
Assignment of Assignor's Interest Oct 9, 2006
From: SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
To: ULVAC, INC.
Reel/Frame 018379/0656 →