Patent Assignment
Reel/Frame 016401/0896
Assignment of Assignor's Interest
Recorded: 2005-03-28
Pages: 3
Assignee
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Nitride Semiconductor Device Such as Transverse Power Fet for High Frequency Signal Amplification or Power Control