Assignment of Assignor's Interest

Recorded: 2005-05-02 Pages: 3

Assignor

JANG, YOUNG G.

Executed: 2005-03-28

Assignee

HYNIX SEMICONDUCTOR INC.

SAN 136-1, AMI-RI, BUBAL-EUB, ICHEON-SI, KYOUNGKI-DO, 467-860, KOREA, REPUBLIC OF

Covered Property (1)

Method of forming passivation layer in semiconductor device

Application: 11/119,646 →

Publication: US 2006/0019499

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.