IP Library › Assignment 016601/0197
Patent Assignment
Reel/Frame 016601/0197

Assignment of Assignor's Interest

Recorded: 2005-05-23 Pages: 2
Assignors
LEVIN, SHARON
Executed: 2005-05-18
SHAPIRA, SHYE
Executed: 2005-05-18
NOAT, IRA
Executed: 2005-05-18
Assignee
TOWER SEMICONDUCTOR LTD.
RAMAT GABRIEL INDUSTRIAL AREA, MIGDAL HAEMEK, 23105, ISRAEL
Covered Property (1)
Low Parasitic Capacitance Schottky Diode
Patent: 7,368,760 →
Application: 11/135,846 →
Publication: US 2006/0125039
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrected Cover Sheet to Correct Inventor's Name, Previously Recorded at Reel/Frame 016601/0197 (Assignment of Assignor's Interest) Feb 10, 2006
From: LEVIN, SHARON; SHAPIRA, SHYE; NAOT, IRA
To: TOWER SEMICONDUCTOR LTD.
Reel/Frame 017255/0720 →