Patent Assignment
Reel/Frame 016722/0712
Assignment of Assignor's Interest
Recorded: 2005-11-04
Received: 2005-11-04
Pages: 4
Assignor
FINISAR CORPORATION
Executed: 2005-10-27
Assignee
SENSORS UNLIMITED
3490 US ROUTE 1, BLDG. 12, PRINCETON, NJ, 08540, UNITED STATES
Covered Properties
(5)
Method for Combined Fabrication of Indium Gallium Arsenide / Indium Phosphide Avalanche Photodiodes and P-I-N Photodiodes
Application:
10/395,333 →
Method of Fabricating Low Dark Current Photodiode Arrays
Application:
09/992,965 →
Method for Combined Fabrication of Indium Gallium Arsenide / Indium Phosphide Avalanche Photodiodes and P-I-N Photodiodes
Application:
09/863,836 →
Epitaxially Grown P-Type Diffusion Source for Photodiode Fabrication
Application:
09/763,422 →
Reduced Dark Current Pin Photo Diodes Using Intentional Doping
Application:
09/762,487 →