IP Library › Granted Patent US 6,555,890
Granted Patent Utility
US 6,555,890 · Confirmation No. 8974

METHOD FOR COMBINED FABRICATION OF INDIUM GALLIUM ARSENIDE / INDIUM PHOSPHIDE AVALANCHE PHOTODIODES AND P-I-N PHOTODIODES

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2004-12-17 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2004-05-10 IFEE Issue Fee Payment (PTO-85B) 1 View
2004-05-10 LET. Miscellaneous Incoming Letter 4 View
2004-05-10 DRW Drawings-only black and white line drawings 2 View
2003-12-12 CTMS Miscellaneous Action with shortened statutory period (SSP) 4 View
2003-09-16 PA.. Power of Attorney 6 View
2003-09-16 OATH Oath or Declaration filed 12 View
2001-09-24 TRNA Transmittal of New Application 5 View
2001-09-24 A.PE Preliminary Amendment 1 View
2001-09-24 DRW Drawings-only black and white line drawings 10 View
2001-05-23 TRNA Transmittal of New Application 5 View
2001-05-23 SPEC Specification 10 View
2001-05-23 CLM Claims 4 View
2001-05-23 ABST Abstract 1 View
2001-05-23 DRW Drawings-only black and white line drawings 8 View
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Quick Facts
Patent No.
US 6,555,890
App. No.
09/863,836
Filed
2001-05-23
Granted
2003-04-29
Pub. No.
US20020011642A1
Art Unit
2818
PTA
-6 days