Patent Assignment
Reel/Frame 016830/0121
Assignment of Assignor's Interest
Recorded: 2004-12-15
Pages: 3
Assignors
KATO, HITOSHI
Executed: 2004-12-01
ORITO, KOICHI
Executed: 2004-12-01
KIKUCHI, HIROYUKI
Executed: 2004-12-01
MAKU, SHINGO
Executed: 2004-12-01
Assignee
TOKYO ELECTRON LIMITED
3-6, AKASAKA 5-CHOME, MINATO-KU, TOKYO, 107-8481, JAPAN
Covered Property
(1)
Method of Cvd for Forming Silicon Nitride Film on Substrate