Assignment of Assignor's Interest

Recorded: 2005-12-22 Pages: 3

Assignor

KO, KWANG YOUNG

Executed: 2005-12-14

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10, DAECHI-DONG, KANGNAM-KU, SEOUL, KOREA, REPUBLIC OF

Covered Property (1)

High-voltage transistor and fabricating method thereof

Application: 11/314,365 →

Publication: US 2006/0138549

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.