Assignment of Assignor's Interest

Recorded: 2005-12-12 Pages: 2

Assignor

KIM, DAE KYEUN

Executed: 2005-12-12

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10, DAECHI-DONG, GANGNAM-GU, SEOUL, 135-280, KOREA, REPUBLIC OF

Covered Property (1)

Method for forming lightly-doped-drain metal-oxide-semiconductor (LDD MOS) device

Application: 11/301,819 →

Publication: US 2007/0105295

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.