Patent Assignment
Reel/Frame 017397/0658
Assignment of Assignor's Interest
Recorded: 2005-12-16
Pages: 3
Assignee
T-RAM SEMICONDUCTOR, INC.
100 HEADQUARTERS DRIVE, ATTENTION: H.C. CHAN, SAN JOSE, CALIFORNIA, 95134
Covered Property
(1)
Reduction of Charge Leakage from a Thyristor-Based Memory Cell
Patent:
7,786,505 →
Application:
11/303,237 →
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.