Assignment of Assignor's Interest

Recorded: 2005-12-30 Pages: 3

Assignor

LEE, HAN CHOON

Executed: 2005-12-23

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10, DAECHI-DONG, KANGNAM-KU, SEOUL, KOREA, REPUBLIC OF

Covered Property (1)

Methods of fabricating fully silicide gate and semiconductor memory device having the same

Application: 11/320,949 →

Publication: US 2007/0077740

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.