Assignment of Assignor's Interest

Recorded: 2005-12-30 Pages: 2

Assignor

YUN, HYUNG SUN

Executed: 2005-12-27

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10, DAECHI-DONG, GANGNAM-GU, SEOUL 135-280, KOREA, REPUBLIC OF

Covered Property (1)

MOS transistor having double gate and manufacturing method thereof

Application: 11/320,824 →

Publication: US 2007/0120200

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.