Patent Assignment
Reel/Frame 017430/0757
Assignment of Assignor's Interest
Recorded: 2005-12-29
Pages: 3
Assignor
KIM, HYOUNG YOON
Executed: 2005-12-23
Assignee
DONGBUANAM SEMICONDUCTOR, INC.
891-10, DAECHI-DONG, GANGNAM-GU, SEOUL 135-280, KOREA, REPUBLIC OF
Covered Property
(1)
Method of sequentially forming silicide layer and contact barrier in semiconductor integrated circuit device
Application:
11/319,709 →
Publication:
US 2006/0141722
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.