Patent Assignment
Reel/Frame 017663/0468
Change of Name
Recorded: 2006-05-23
Pages: 21
Assignor
DONGBU-ANAM SEMICONDUCTOR, INC.
Executed: 2006-03-24
Assignee
DONGBU ELECTRONICS CO., LTD.
891-10, DAECHI-DONG, GANGNAM-GU, SEOUL, KOREA, REPUBLIC OF
Covered Properties
(117)
Method of Forming Metal Line in Semiconductor Device
Method for Manufacturing Semiconductor Device Using Dual-Damascene Pattern
Metal Interconnection Structure of Semiconductor Device and Method of Forming the Same
Method for Fabricating Vertical Transistor
Method of manufacturing p-channel MOS transistor and CMOS transistor
Application:
11/020,096 →
Publication:
US 2005/0153498
Method of Manufacturing Cmos Transistor by Using Soi Substrate
High voltage semiconductor device and fabricating method thereof
Application:
11/020,276 →
Publication:
US 2005/0139916
Phase Shift Mask and Fabricating Method Thereof
Method of Fabricating Gate Electrode of Semiconductor Device
Method for Forming Sti of Semiconductor Device
Method for Forming Gate Oxide Layer in Semiconductor Device
Method for Forming Metal Pattern to Reduce Contact Resistivity with Interconnection Contact
Non-Volatile Memory Device and Drive Method Thereof
Method for Forming Metal Wirings of Semiconductor Device
Method for Fabricating Split Gate Flash Memory Device
Method for Forming Metal Wiring of Semiconductor Device
Manufacturing Method of Semiconductor Device
Erase Method in Flash Memory Device
Semiconductor Device Having a Dual-Damascene Gate and Manufacturing Method Thereof
Spice Simulation System for Diode and Method of Simulation Using the Same
Method of Forming Metal Wiring of Semiconductor Device
Method for Isolating Semiconductor Devices
Capacitor for semiconductor device and fabricating method thereof
Application:
11/024,652 →
Publication:
US 2005/0139886
Capacitor of Semiconductor Device and Method of Manufacturing the Same
Dual Damascene Interconnection in Semiconductor Device and Method for Forming the Same
Method of Fabricating a Photomask
Method of Fabricating Semiconductor Device
Method for Fabricating Semiconductor Device Using Selective Epitaxial Growth
Method for Forming Dual Damascene Interconnection in Semiconductor Device
Method of Forming Contact Hole
Method of Fabricating Memory Cell in Semiconductor Device
Method of Fabricating Transistor in Semiconductor Device
Metal pad of semiconductor device and method for bonding the metal pad
Application:
11/024,699 →
Publication:
US 2006/0024944
Flash Memory Device and Fabricating Method Thereof
Semiconductor Device and Method for Fabricating the Same
Ion implantation method in semiconductor device
Application:
11/024,704 →
Publication:
US 2005/0176224
Method of Pattering a Photoresist Film Using a Lithographic
Method of patterning photoresist film
Application:
11/024,721 →
Publication:
US 2006/0040216
Method of Fabricating Split Gate Flash Memory Device
Method of fabricating MOS transistor
Application:
11/024,725 →
Publication:
US 2005/0142719
Method for Etching Upper Metal of Capacitator
Method for Removing Mottled Etch in Semiconductor Fabricating Process
Method of Manufacturing Semiconductor Device
Semiconductor Device and Method for Fabricating the Same
Method for Manufacturing Semiconductor Device
Method for forming interconnection line in semiconductor device using a phase-shift photo mask
Application:
11/024,741 →
Publication:
US 2006/0014381
Semiconductor Device and Fabricating Method Thereof
Lithography Apparatus and Method for Measuring Alignment Mark
Non-Volatile Memory Device
Method of Fabricating Split Gate Flash Memory Device
Methods of Fabricating Nonvolatile Memory Device
Method for Fabricating a Semiconductor Device
Method of Calibrating Semiconductor Line Width
Semiconductor Device and Method for Fabricating the Same
Method of Fabricating Mos Transistor
Photo mask and method for fabricating the same
Application:
11/024,793 →
Publication:
US 2005/0142461
Method of Forming Barrier Metal in Semiconductor Device
Dummy layer in semiconductor device and fabricating method thereof
Application:
11/024,796 →
Publication:
US 2005/0139905
Method for Forming Dual Damascene Interconnection in Semiconductor Device
Method for manufacturing semiconductor device having salicide
Application:
11/024,845 →
Publication:
US 2005/0170596
Method for Fabricating Mos Field Effect Transistor
Method for Forming Contact Hole for Dual Damascene Interconnection in Semiconductor Device
Nonvolatile Memory Device and Methods of Fabricating the Same
Forming Method of Gate Insulating Layer and Nitrogen Density Measuring Method Thereof
Method of Fabricating Interconnection Structure of Semiconductor Device
Method for Fabricating Metal Wirings of Semiconductor Device
Mos Transistor and Manufacturing Method Thereof
Semiconductor Device with a Metal Line and Method of Forming the Same
Method of Manufacturing a High Voltage Semiconductor Device Including a Deep Well and a Gate Oxide Layer Simultaneously
Method of Forming a Metal Interconnection Line in a Semiconductor Device Using an Fsg Layer
Dry Etching Method and Apparatus for Performing Dry Etching
Semiconductor Device and Method of Manufacturing the Semiconductor Device
Manufacturing Method of Semiconductor Device
Semiconductor Device and Method of Manufacturing the Semiconductor Device
Metal-to-metal capacitor
Application:
11/315,501 →
Publication:
US 2006/0157770
Cleaning method for removing copper-based foreign particles
Application:
11/318,507 →
Publication:
US 2006/0137715
Baking apparatus used in photolithography process, and method for controlling critical dimension of photoresist patterns using the same
Application:
11/318,508 →
Publication:
US 2006/0154479
Method for Forming an Aluminum Contact
A Flash Memory Device and a Method of Manufacturing the Same
Method of Forming Pad and Fuse in Semiconductor Device
Method of Cleaning Silicon Nitride Layer
Method for Forming Shallow Trench Isolation in Semiconductor Device
Method for Forming Shallow Trench Isolation Utilizing Two Filling Oxide Layers
Semiconductor Device and Manufacturing Method Thereof
Non volatile memory device and method of manufacturing the same
Application:
11/319,700 →
Publication:
US 2007/0077707
Method of sequentially forming silicide layer and contact barrier in semiconductor integrated circuit device
Application:
11/319,709 →
Publication:
US 2006/0141722
Method of Forming Shallow Trench Isolation
Method for forming an intermetal dielectric layer in a semiconductor device using HDP-CVD, and a semiconductor device manufactured thereby
Application:
11/320,396 →
Publication:
US 2006/0138667
Semiconductor Device with a Metal Line and Method of Forming the Same
Method for Fabricating a Metal-Insulator-Metal Capacitor
Method for Forming a Plurality of Metal Lines in a Semiconductor Device Using Dual Insulating Layer
Wafer transfer apparatus having two independently movable transfer modules
Application:
11/320,466 →
Publication:
US 2006/0182538
Self-Aligned Bipolar Semiconductor Device and Fabrication Method Thereof
Method of Manufacturing an Isolation Layer of a Flash Memory
Method of manufacturing a flash memory device
Application:
11/320,586 →
Publication:
US 2006/0148175
Semiconductor Device with a Metal Line and Method of Forming the Same
Non-Volatile Memory Device and Method of Manufacturing the Same
Method for photomask processing
Application:
11/320,589 →
Publication:
US 2006/0148219
Method for Fabricating a Metal-Insulator-Metal Capacitor
Method of Forming Isolation Oxide Layer in Semiconductor Integrated Circuit Device
Method for Forming Floating Gate in Flash Memory Device
Stack gate structure of flash memory device and fabrication method for the same
Application:
11/320,613 →
Publication:
US 2006/0281257
Wafer surface pre-treatment with hydrogen for gate oxide formation
Application:
11/320,614 →
Publication:
US 2006/0148223
Extended Drain Metal Oxide Semiconductor Transistor and Manufacturing Method Thereof
Semiconductor package device having reduced mounting height and method for manufacturing the same
Application:
11/320,616 →
Publication:
US 2006/0145313
Method for Automatic Measurement of Failure in Subthreshold Region of Metal-Oxide-Semiconductor Transistor
Method for Forming Shallow Trench Isolation in Semiconductor Device Using a Pore-Generating Layer
Method of manufacturing a gate in a flash memory device
Application:
11/320,687 →
Publication:
US 2006/0148176
Method for Forming a Transistor for Reducing a Channel Length
Method of forming shallow trench isolation
Application:
11/320,725 →
Publication:
US 2007/0077723
Semiconductor Device Having High Voltage Mos Transistor and Fabrication Method Thereof
Nonvolatile Memory Device and Method for Fabricating the Same
Printed Circuit Board Having Reduced Mounting Height
Flash Memory Device and Method for Fabricating the Same
Semiconductor Device and Method of Manufacturing the Same
Division Arithmatic Unit of Variable Radix
Method of Fabricating a Capacitor for a Semiconductor Device
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Dec 10, 2004
From: KIM, JUNG HO
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 016081/0383 →
Assignment of Assignor's Interest
Dec 23, 2004
From: PARK, JEONG HO
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016128/0238 →
Assignment of Assignor's Interest
Dec 23, 2004
From: KIM, SANG KWON
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016122/0780 →
Assignment of Assignor's Interest
Dec 27, 2004
From: KIM, HAK-DONG
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016134/0270 →
Assignment of Assignor's Interest
Dec 27, 2004
From: KIM, HAK-DONG
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016133/0965 →
Assignment of Assignor's Interest
Dec 27, 2004
From: KIM, JUM SOO; JUNG, SUNG MUN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016133/0984 →
Assignment of Assignor's Interest
Dec 30, 2004
From: OH, SANG HUN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016140/0686 →
Assignment of Assignor's Interest
Dec 30, 2004
From: LEE, DATE-GUN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016139/0696 →
Assignment of Assignor's Interest
Dec 30, 2004
From: CHOI, YONG KEON
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016139/0358 →
Assignment of Assignor's Interest
Dec 30, 2004
From: JUNG, BYUNG-HYUN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016137/0335 →
Assignment of Assignor's Interest
Dec 30, 2004
From: HAN, JAE-WON
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016136/0963 →
Assignment of Assignor's Interest
Dec 30, 2004
From: JUNG, JIN HYO
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016136/0905 →
Assignment of Assignor's Interest
Dec 30, 2004
From: LEE, JUN SEOK
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016151/0477 →
Assignment of Assignor's Interest
Dec 30, 2004
From: SEO, YOUNG HUN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016151/0505 →
Assignment of Assignor's Interest
Dec 30, 2004
From: KIM, YEONG SIL
To: DONGBUANAM SEMICONDUCTOR, INC.
Reel/Frame 016151/0508 →
Assignment of Assignor's Interest
Dec 30, 2004
From: OH, SU JIN
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016141/0143 →
Assignment of Assignor's Interest
Dec 30, 2004
From: JUNG, JIN HYO
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016141/0028 →
Assignment of Assignor's Interest
May 24, 2005
From: KIM, HAG DONG
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 016596/0192 →
Assignment of Assignor's Interest
Oct 15, 2014
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 034009/0157 →
Corrective Assignment to Correct Remove Patent No. 878209 from Exhibit B Previously Recorded at Reel: 034009 Frame: 0157. Assignor(S) Hereby Confirms the Assignment.
Oct 24, 2014
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 034087/0097 →
Assignment of Assignor's Interest
Feb 23, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041363/0867 →
Assignment of Assignor's Interest
Feb 23, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041364/0015 →
Assignment of Assignor's Interest
Feb 23, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041363/0555 →
Assignment of Assignor's Interest
Feb 23, 2017
From: DONGBU HITEK, CO., LTD.
To: INPHI CORPORATION
Reel/Frame 041364/0106 →
Merger and Change of Name
Nov 29, 2017
From: DONGBU ELECTRONICS CO., LTD.; DONGBU HITEK CO., LTD.
To: DONGBU HITEK CO., LTD.
Reel/Frame 044533/0523 →