Method of forming isolation oxide layer in semiconductor integrated circuit device
View Patent ↗A method is provided in which a first oxide layer is deposited on a silicon substrate and etched to form openings. A first silicon epitaxial layer is grown on the substrate in the openings, forming first active regions, a second oxide layer is deposited thereon, and the first and second oxide layers are etched such that the first oxide layer is wholly removed and the second oxide layer remains only on the first silicon epitaxial layer. A third oxide layer is thermally grown on entire resultant surfaces and then blanket-etched to remain only on sidewalls of the first silicon epitaxial layer. A second silicon epitaxial layer is grown on the exposed substrate between the first active regions, thus forming second active regions. The second oxide layer remaining on the first silicon epitaxial layer is removed. The first and second active regions are separated and electrically isolated by the third oxide layer.
1. A method of forming an isolation oxide layer, the method comprising:
forming a first oxide layer on a silicon substrate;
selectively etching the first oxide layer until the silicon substrate is partly exposed, thereby forming a plurality of openings in the first oxide layer, wherein each opening defines a first active region;
forming a first silicon epitaxial layer on the silicon substrate in the openings, wherein the first silicon epitaxial layer forms a plurality of first active regions;
forming a second oxide layer on both the first oxide layer and the first silicon epitaxial layer;
etching the second oxide layer and the first oxide layer such that the first oxide layer is wholly removed and the second oxide layer remains only on the first silicon epitaxial layer;
thermally growing a third oxide layer on entire resultant surfaces;
blanket-etching the third oxide layer such that the third oxide layer remains only on sidewalls of the first silicon epitaxial layer, wherein the silicon substrate is exposed between the adjacent first active regions formed by the first silicon epitaxial layer;
forming a second silicon epitaxial layer on the exposed silicon substrate, wherein the second silicon epitaxial layer forms a plurality of second active regions between the first active regions; and
removing the second oxide layer remaining on the first silicon epitaxial layer,
wherein the first and second active regions are disposed one by one, being physically separated and electrically isolated by the third oxide layer.
2. The method of claim 1 , wherein the forming of the first oxide layer uses a chemical vapor deposition technique.
3. The method of claim 1 , wherein the forming of the second oxide layer uses a chemical vapor deposition technique.
4. The method of claim 1 , wherein the second oxide layer has a smaller thickness than the first oxide layer.
5. The method of claim 1 , wherein the selectively etching of the first oxide layer uses a dry etch technique.
6. The method of claim 1 , wherein the forming of the first silicon epitaxial layer uses a selective epitaxial growth technique.
7. The method of claim 1 , wherein the forming of the second silicon epitaxial layer uses a selective epitaxial growth technique.