Method for etching upper metal of capacitator
View Patent ↗A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film of the capacitor includes the steps of forming a lower metal film, a lower nitride film, an upper metal film, and an upper nitride film on a substrate having a predetermined device formed thereon, and then forming a pattern thereover; etching the upper nitride film with CHF 3 , Ar and Cl 2 using the pattern; over etching the upper metal film more than 50% with CHF 3 , Ar and N 2 using the pattern; etching the upper metal film with CHF 3 , Ar and N 2 using the pattern; and etching the lower nitride film with CHF 3 and Ar using the pattern.
1. A method for manufacturing a capacitor in a semiconductor device, comprising the steps of: forming in a sequence a lower metal film, a lower nitride film, an upper metal film, and an upper nitride film on a substrate having a predetermined device formed thereon; to form a stacked layer structure forming a pattern over a portion of the stacked layer structure; etching the upper nitride film with CHF 3 , Ar and N 2 using the pattern as a mask; over etching the upper metal film more than 50% with CHF 3 , Ar and N 2 using the pattern as the mask; etching a remaining portion of the upper metal film with CHF 3 , Ar and Cl 2 using the pattern as a mask; and etching the lower nitride film with CHF 3 and Ar using the pattern.
2. The method of claim 1 , wherein the forming step includes forming the upper metal film with Ti/TiN.
3. The method of claim 1 , wherein the step of etching the upper nitride film includes etching under a condition of process pressure of 5 to 10 mTorr, source power of 500 to 1500 W, bias power of 100 to 200 W, CHF 3 gas of 15 to 25 scm, Ar gas of 100 to 200 scm, and N 2 gas of 15 to 25 scm.
4. The method of claim 1 , wherein over etching step includes etching of the upper metal film more than 50% under a condition of process pressure of 5 to 10 mTorr, source power of 500 to 1500 W, bias power of 100 to 200 W, CHF 3 gas of 15 to 25 scm, Ar gas of 100 to 200 scm, and N 2 gas of 15 to 25 scm.
5. The method of claim 1 , wherein the step of etching the remaining portion of the upper metal film includes etching under a condition of process pressure of 5 to 10 mTorr, source power of 500 to 1500 W, bias power of 100 to 200 W, Cl 2 gas of 40 to 60 scm, CHF3 gas of 5 to 15 scm, and Ar gas of 40 to 60 scm.
6. The method of claim 1 , wherein the step of etching the lower nitride film includes etching under a condition of process pressure of 5 to 10 mTorr, source power of 500 to 1500 W, bias power of 100 to 200 W, CHF 3 gas of 15 to 25 scm, and Ar gas of 100 to 200 scm.