Method for manufacturing semiconductor device
View Patent ↗A method of manufacturing a semiconductor device including forming an ONO film on a semiconductor substrate and a hard mask layer on the ONO film, forming a trench by etching the hard mask layer and the ONO film on a field region of the semiconductor substrate using a photo etch process and etching the field region of the semiconductor substrate, and forming a device separator at the trench. The method also includes exposing the ONO film by removing the hard mask layer on the ONO film, and leaving the ONO film only on a prospective SONOS gate in a cell region of the semiconductor substrate and removing the ONO film the remainder region thereof. The method further includes forming a gate oxide film on the semiconductor substrate at an outside of the ONO film, and forming a gate electrode on the gate oxide film and the ONO film, respectively.
1. A method of manufacturing a semiconductor device, comprising:
forming an ONO film immediately on top of a semiconductor substrate and a hard mask layer on top of the ONO film;
forming a trench by etching the hard mask layer and the ONO film in a field region of the semiconductor substrate using a photo etch process and then etching the field region of the semiconductor substrate to a predetermined depth;
forming a device separator at the trench;
exposing a top surface of the ONO film by removing the hard mask layer on the ONO film;
leaving the ONO film only on a prospective SONOS gate region in a cell region of the semiconductor substrate and removing a remainder of the ONO film;
forming a gate oxide film on the semiconductor substrate at an outside of the ONO film; and
simultaneously forming at least one gate electrode on the gate oxide film and an additional gate electrode on the ONO film.
2. The method of claim 1 , wherein the step of forming a gate oxide film includes forming the gate oxide film in the cell region of the semiconductor substrate and in a logic region of the semiconductor substrate.
3. The method of claim 1 , wherein the step of forming an ONO film includes forming the ONO film including a bottom oxide film with a thickness of about 50 to about 100 Å, a trap nitride film with a thickness of about 20 to about 50 Å, and a top oxide film with a thickness of about 30 to about 100 Å.
4. The method of claim 3 , wherein the step of forming an ONO film includes forming the bottom oxide film by wet oxidation.
5. The method of claim 3 , wherein the step of forming an ONO film includes forming the top oxidation film by high temperature oxidation.
6. The method of claim 1 , wherein the least one gate electrode on the gate oxide film and the additional gate electrode on the ONO film are formed from a same layer of polycrystalline silicon.
7. The method of claim 1 , wherein simultaneously forming at least one gate electrode on the gate oxide film and an additional gate electrode on the ONO film comprises: forming a polycrystalline silicon layer on the gate oxide film and the ONO film; and removing a portion of the polycrystalline silicon layer while leaving a portion of the polycrystalline silicon layer on a gate electrode formation region of the gate oxide film and leaving a portion of the polycrystalline silicon layer on a gate electrode formation region of the ONO film.