Semiconductor device and method for fabricating the same

1. A method for fabricating a semiconductor device comprising:

forming a depression in a front surface of a semiconductor substrate;

forming a metal material layer on the semiconductor substrate that fills the depression;

forming an electrode pad within the depression by chemical and mechanically polishing the metal material layer;

forming a protective layer of an insulating material for the electrode pad on the surface of the semiconductor substrate after forming the electrode pad within the depression;

forming structures including circuit devices and metal wires on the front surface of the semiconductor substrate; and

exposing the electrode pad by removing a rear surface of the semiconductor substrate.

2. The method of claim 1 , wherein the step of forming the depression includes forming the depression with a depth of about 300 μm to about 600 μm.

3. The method of claim 1 , wherein the step of exposing the electrode pad includes chemically and mechanically polishing the rear surface of the semiconductor substrate until the electrode pad is exposed to cause the surface of the electrode pad to be in a same plane as the rear surface of the semiconductor substrate.

4. A method for fabricating a semiconductor device comprising:

a step for forming a depression in a front surface of a semiconductor substrate;

a step of forming a metal material layer on the semiconductor substrate that fills the depression;

a step for forming an electrode pad within the depression by chemical and mechanically polishing the metal material layer;

a step of forming a protective layer of an insulating material for the electrode pad on the surface of the semiconductor substrate after forming the electrode pad within the depression;

a step for forming structures including circuit devices and metal wires on the front surface of the semiconductor substrate; and

a step for exposing the electrode pad by removing a rear surface of the semiconductor substrate.

5. The method of claim 4 , wherein the step for forming the depression includes a step for forming the depression with a depth of about 300 μm to about 600 μm.

6. The method of claim 4 , wherein the step for exposing the electrode pad includes a step for chemically and mechanically polishing the rear surface of the semiconductor substrate until the electrode pad is exposed to cause the surface of the electrode pad to be in a same plane as the rear surface of the semiconductor substrate.

7. The method of claim 1 , wherein forming an electrode pad further comprises forming a front surface of an electrode pad on the front surface of the semiconductor substrate by chemically and mechanically polishing the metal material layer to expose the front surface of the semiconductor substrate.

8. The method of claim 1 , wherein forming a protective layer of an insulating material further comprises forming the protective layer of an insulating material prior to forming the structures including circuit devices and metal wires on the front surface of the semiconductor substrate.

9. The method of claim 1 , wherein forming structures further comprises forming structures including circuit devices and metal wires on the front surface of the semiconductor substrate and on the protective layer of an insulating material.

10. The method of claim 1 , wherein exposing the electrode pad further comprises exposing a rear surface of the electrode pad by chemically and mechanically polishing a rear surface of the semiconductor substrate.

11. The method of claim 10 , wherein exposing the rear surface of the electrode occurs after forming the structures including circuit devices and metal wires on the front surface of the semiconductor substrate.