Method of patterning a photoresist film using a lithographic
View Patent ↗Method for patterning a photoresist film in lithographic process including the steps of: coating the photoresist film on a substrate provided with an under layer; exposing the substrate; firstly developing the photoresist film; exposing a whole surface of the substrate; and secondly developing the photoresist film. The present method has effects on improving an accuracy of formation of pattern and preventing from scum, photoresist residues, and so on, with relatively low cost and short process time.
1. A method for patterning a photoresist film using lithography, comprising:
coating the photoresist film on a substrate provided with an under layer;
exposing the substrate to light through a lithographic photomask;
a first developing of the photoresist film;
exposing a whole surface of the substrate to light; and
a second developing of the photoresist film;
wherein exposing a whole surface of the substrate comprises exposing the whole surface of the substrate to a light source with an exposure energy operable to reduce a thickness of the photoresist film by about 10% of an initial thickness of the photoresist film after the second developing.
2. The method of claim 1 , further comprising the step of performing an O2 plasma process on the under layer, before the step of coating the photoresist film.
3. The method of claim 1 , wherein the under layer is silicon oxynitride or silicon nitride.
4. The method of claim 1 , wherein a light source in the step of exposing a whole surface of the substrate is the same as that in the step of exposing the substrate.
5. A method for patterning a photoresist film using lithography, comprising:
a step for coating the photoresist film on a substrate provided with an under layer;
a step for exposing the photoresist film to light having a first exposure energy via a lithographic photomask;
a step for firstly developing the photoresist film;
a step for exposing a whole surface of the photoresist film having a second exposure energy lower than the first exposure energy; and
a step for secondly developing the photoresist film;
wherein the step for exposing a whole surface of the photoresist film comprises exposing the whole surface of the photoresist film to light with the second exposure energy so as to reduce a thickness of the photoresist film by about 10% of an initial thickness of the photoresist film after the second developing.
6. The method of claim 5 , further comprising a step for performing an O2 plasma process on the under layer, before the step for coating the photoresist film.
7. The method of claim 5 , wherein the under layer is silicon oxynitride or silicon nitride.
8. The method of claim 5 , wherein a light source in the step for exposing a whole surface of the substrate is the same as that in the step for exposing the substrate.