IP Library Assignment 016139/0358
Patent Assignment
Reel/Frame 016139/0358

Assignment of Assignor's Interest

Recorded: 2004-12-30 Pages: 3
Assignor
CHOI, YONG KEON
Executed: 2004-12-23
Assignee
DONGBUANAM SEMICONDUCTOR INC.
891-10, DAECHI-DONG, KANGNAM-KU, SEOUL 135-523, KOREA, REPUBLIC OF
Covered Property (1)
Method for Forming Gate Oxide Layer in Semiconductor Device
Patent: 7,338,868 →
Application: 11/024,466 →
Publication: US 2005/0142770
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name May 23, 2006
From: DONGBU-ANAM SEMICONDUCTOR, INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 017663/0468 →
Merger and Change of Name Nov 29, 2017
From: DONGBU ELECTRONICS CO., LTD.; DONGBU HITEK CO., LTD.
To: DONGBU HITEK CO., LTD.
Reel/Frame 044533/0523 →
Change of Name Nov 30, 2017
From: DONGBU HITEK CO., LTD.
To: DB HITEK CO., LTD
Reel/Frame 044555/0913 →
Assignment of Assignor's Interest Jul 10, 2019
From: DB HITEK CO., LTD.
To: COLUMBA TECHNOLOGIES INC.
Reel/Frame 049709/0857 →