Method for forming STI of semiconductor device
View Patent ↗A method for forming a STI of a semiconductor device includes steps of sequentially forming a pad oxide film and a pad nitride film on the semiconductor device and carrying out a pattern process PR; etching the pad oxide film and the nitride film and carrying out a cleaning process; selectively growing epitaxial silicon; and carrying out liner oxidation on the epitaxial silicon and carrying out CMP so as to form an oxidation fill and STI.
1. A method for forming a shallow trench isolation (STI) of a semiconductor device, comprising:
preparing a semiconductor substrate having an active region and a field region defined thereon;
forming, in succession, a pad oxide film and a pad nitride film on the semiconductor substrate by selectively etching the pad oxide film, the nitride film and the semiconductor substrate on the field region, to form a trench;
selectively growing an epitaxial silicon layer on a surface of the trench, including forming a rounded edge at a top portion of said epitaxial silicon layer adjacent to a top opening edge of said trench;
forming a liner oxide layer on the epitaxial silicon layer; and
forming a STI in the trench.
2. A method for forming a shallow trench isolation (STI) of a semiconductor device, comprising:
preparing a semiconductor substrate having an active region and a field region defined thereon;
forming, in succession, a pad oxide film and a pad nitride film on the semiconductor substrate by selectively etching the pad oxide film, the nitride film and the semiconductor substrate on the field region, to form a trench;
selectively growing an epitaxial silicon layer on a surface of the trench, including forming a rounded edge at a top portion of said epitaxial silicon layer adjacent to a top opening edge of said trench;
forming a liner oxide layer on the epitaxial silicon layer; and
forming a STI in the trench
wherein said selectively growing step includes not growing the epitaxial silicon layer at the top portion so as to form the rounded edge.
3. A method for forming a shallow trench isolation (STI) of a semiconductor device, comprising:
forming, in succession, a pad oxide film and a pad nitride film on a semiconductor substrate having an active region and a field region defined therein;
selectively removing portions of the pad oxide film, the nitride film and the semiconductor substrate on the field region to form a trench;
selectively growing an epitaxial silicon layer on a surface of the trench, including forming a rounded edge at a top portion of said epitaxial silicon layer adjacent to a top opening edge of said trench; and
forming a liner oxide layer on the epitaxial silicon layer; and
forming a STI in the trench.