Method of cleaning silicon nitride layer
View Patent ↗A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.
1. A method of cleaning a silicon nitride layer on a substrate, the method comprising:
treating the substrate with a spin scrubber or a quick dump rinse;
dipping the substrate into a second solution selected from the group consisting of an SC-1 solution, an NC-2 solution, an alkali solution and anion surfactant thereby changing a zeta potential of the silicon nitride layer-from positive to negative; and
cleaning the silicon nitride layer with a first solution selected from an alkali solution and an NC-2 solution, whereby impurities are removed from the silicon nitride layer.
2. The method of claim 1 , further comprising: before the cleaning of the silicon nitride layer, treating the substrate with a spin scrubber or a quick dump rinse.
3. The method of claim 1 , wherein the alkali solution is an ammonium hydroxide solution or a tri-methyl ammonium hydroxide solution.
4. The method of claim 1 , wherein the alkali solution maintains a predetermined temperature.
5. The method of claim 1 , wherein the changing of the zeta potential is performed without using vibrators.
6. The method of claim 1 , wherein the cleaning of the silicon nitride layer is performed with a vibrator used.
7. The method of claim 1 , wherein the cleaning of the silicon nitride layer with the NC-2 solution has a mixing ratio of 1:2.about.5:30.about.50 in TMH:H.sub.2O.sub.2:H.sub.2O.
8. The method of claim 1 , wherein the cleaning of the silicon nitride layer with the NC-2 solution is performed at a temperature of about 50.degree. C. to about 80.degree. C.