Semiconductor device with a metal line and method of forming the same
View Patent ↗A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.
1. A method of forming a metal line in a semiconductor device, comprising:
forming an insulation layer on a semiconductor substrate including a predetermined lower structure;
forming vertical holes and horizontal holes by etching the insulation layer;
forming supporting parts by filling the vertical holes and horizontal holes with a nitride layer;
forming a damascene metal line layer by forming a metal line on the insulation layer;
performing the forming process for the damascene metal line layer a plurality of times;
removing the insulation layer; and
forming a protective layer on the highest layer of the damascene metal line layer.
2. The method of claim 1 , wherein the supporting parts are formed so as to support the metal line.
3. The method of claim 1 , wherein a plurality of the horizontal holes are formed on each vertical hole.
4. The method of claim 1 , wherein the insulation layer is an oxide layer.
5. The method of claim 4 , wherein the insulation layer is removed by using a HF etchant.
6. The method of claim 3 , wherein a gap between the horizontal holes on the highest layer of the damascene metal line layer is formed at 0.1 μm or less.
7. The method of claim 1 , wherein the nitride layer is a SiN layer.
8. The method of claim 7 , wherein the SiN layer is formed by using a PECVD method.
9. The method of claim 8 , wherein the PECVD method is performed under a condition that SiH 4 , SiH 2 Cl 2 , NH 3 , or N 2 gas is used at a temperature of 300 to 450° C.
10. The method of claim 1 , wherein the protective layer is composed of the oxide layer and the nitride layer.
11. A semiconductor device, comprising:
a semiconductor substrate having a predetermined lower structure;
supporting parts formed on the semiconductor substrate;
a plurality of damascene metal line layers including a metal line formed between the supporting parts; and
a protective layer formed on the damascene metal line layer.
12. The semiconductor device of claim 11 , wherein the supporting parts are formed by filling a nitride layer in vertical and horizontal holes which are formed by etching an insulation layer on the substrate.
13. The semiconductor device of claim 11 , wherein the supporting parts are formed so as to support the metal line.
14. The semiconductor device of claim 11 , wherein the supporting parts are composed of a SiN material.
15. The semiconductor device of claim 11 , wherein the damascene metal line layer uses air as an insulating material.
16. The semiconductor device of claim 11 , wherein the air has a dielectric constant of 1.
17. The semiconductor device of claim 11 , wherein the protective layer is composed of an oxide layer and a nitride layer.