Method of fabricating transistor in semiconductor device
View Patent ↗A method of fabricating a transistor in a semiconductor device. A gate oxide layer and a gate are formed on a semiconductor substrate. An oxide layer and a silicon nitride layer are stacked on the substrate. The stacked oxide and silicon nitride layers are etched back to expose a surface of the substrate. The silicon nitride layer is removed to form a gate sidewall spacer. Impurity ions are implanted into the substrate through the exposed surface of the substrate.
1. A method of fabricating a transistor in a semiconductor device, comprising:
forming a gate oxide layer and a gate on a semiconductor substrate;
stacking an oxide layer and a silicon nitride layer on the substrate;
etching back the stacked oxide and silicon nitride layers to expose a surface of the substrate;
removing the silicon nitride layer to form a gate sidewall spacer;
oxidizing the exposed surface of the substrate only to adjust an amount of impurity ions to be implanted;
implanting impurity ions into the substrate through the exposed surface of the substrate;
performing silicidation on the substrate by using the gate sidewall spacer as a silicidation barrier;
forming a premetal dielectric layer over the substrate; and
performing wiring on the substrate.
2. The method according to claim 1 , wherein during the step of implanting impurity ions a density and depth profile of the implanted impurity ions are controlled using a thickness of the oxide layer.
3. The method according to claim 1 , wherein during the step of removing the silicon nitride layer a size of the gate sidewall spacer is controlled using a thickness of the silicon nitride layer.
4. The method according to claim 1 , wherein during the step of implanting impurity ions a range of the implanted impurity ions is controlled using a size of the gate sidewall spacer.
5. The method according to claim 1 , wherein during the step of removing the silicon nitride layer the gate sidewall spacer is formed to prevent the impurity ions from diffusing beneath the gate oxide layer.