IP Library Assignment 017461/0270
Patent Assignment
Reel/Frame 017461/0270

Assignment of Assignor's Interest

Recorded: 2006-01-13 Pages: 8
Assignor
Assignee
LG ELECTRONICS INC.
20 YEOUIDO-DONG, YEONGDEUNGPO-GU, SEOUL, 150-721, KOREA, REPUBLIC OF
Covered Property (1)
Method of Fabricating Ohmic Contact on N-Type Gallium Nitride (Gan) of Room Temperature by Plasma Surface Treatment
Patent: 7,214,325 →
Application: 10/103,523 →
Publication: US 2002/0155691
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jun 27, 2002
From: LEE, JONG-LAM; JANG, HO W.; KIM, JONG K.; JEON, CHANGMIN
To: ORIOL, INC.
Reel/Frame 013044/0337 →
Assignment of Assignor's Interest Oct 15, 2013
From: LG ELECTRONICS, INC.
To: LG INNOTEK CO. LTD.
Reel/Frame 031410/0169 →
Assignment of Assignor's Interest May 25, 2021
From: LG INNOTEK CO., LTD.
To: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
Reel/Frame 056366/0335 →