IP Library › Assignment 017522/0195
Patent Assignment
Reel/Frame 017522/0195

Assignment of Assignor's Interest

Recorded: 2006-02-02 Pages: 3
Assignors
SANO, MASAFUMI
Executed: 2005-12-22
NAKAGAWA, KATSUMI
Executed: 2005-12-22
HOSONO, HIDEO
Executed: 2006-01-18
KAMIYA, TOSHIO
Executed: 2006-01-19
NOMURA, KENJI
Executed: 2006-01-19
Assignees
CANON KABUSHIKI KAISHA
3-30-2, SHIMOMARUKO, OHTA-KU, TOKYO, JAPAN
TOKYO INSTITUTE OF TECHNOLOGY
2-12-1, OOKAYAMA, MEGURO-KU, TOKYO, JAPAN
Covered Property (1)
Field Effect Transistor with Amorphous Oxide Active Layer Containing Microcrystals and Gate Electrode Opposed to Active Layer Through Gate Insulator
Patent: 7,601,984 →
Application: 11/269,600 →
Publication: US 2006/0108636
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 11, 2013
From: CANON KABUSHIKI KAISHA; TOKYO INSTITUTE OF TECHNOLOGY
To: CANON KABUSHIKI KAISHA; TOKYO INSTITUTE OF TECHNOLOGY; JAPAN SCIENCE AND TECHNOLOGY AGENCY
Reel/Frame 030776/0506 →